GaAs (Gallium Arsenide) Crystal and Wafers
High-Performance Substrate Material: GaAs wafers serve as an excellent substrate material for the epitaxial thin film growth of other III-V semiconductors, such as indium gallium arsenide and aluminum gallium arsenide.
Excellent Electrical Properties: GaAs substrates exhibit good performance under high frequencies, high and low temperatures, low noise, high radiation tolerance, and higher electron mobility than silicon. These properties make them suitable for high-frequency applications like radio frequency (RF) and microwave devices.
Direct Bandgap for Optoelectronic Applications: The direct bandgap of GaAs enables efficient emission and absorption of light, making it ideal for optoelectronic devices like high-density p-i-n detectors and laser diodes with robust silicon electronic integrated circuits.
Versatile Applications: Kingwin Optics’ GaAs crystals, wafers, and substrates are suitable for a wide range of applications, including epitaxial growth, microwave devices, IR LEDs, laser diodes, solar cells, and infrared optical windows.
Applications: Epitaxial Growth, Microwave Devices, Optoelectronic Devices, Solar Cells, Infrared Optical Windows, etc.
Gallium Arsenide (GaAs) Crystal is a crystalline compound consisting of the elements gallium and arsenic. It is a III-V direct bandgap semiconductor with a Zinc blende crystal structure. Kingwin Optics offers custom GaAs crystals, wafers, and substrates that are suitable for a wide range of applications, including epitaxial growth, microwave devices, IR LEDs, laser diodes, solar cells, and infrared optical windows.
Specifications:
| Growth Method | VGF/ HB |
| Crystal Structure | Zinc Blende |
| Appearance | Very dark red, vitreous crystals |
| Density | 5.3176 g/cm3 |
| Lattice Constant | 5.65×10-10m |
| Molar Mass | 144.645 g•mol-1 |
| Band Gap@300 K | 1.424eV |
| Electron Mobility @300K | 8500 cm2/(V×s) |
| Thermal Conductivity@300K | 0.55 W/(cm×K) |
| Refractive Index | 3.3 |
| Chemical Stability | Insoluble in water, ethanol, methanol, and acetone. Soluble in HCl. |
Key Advantages:
- High-Performance Substrate Material: GaAs wafers serve as an excellent substrate material for the epitaxial thin film growth of other III-V semiconductors, such as indium gallium arsenide and aluminum gallium arsenide.
- Excellent Electrical Properties: GaAs substrates exhibit good performance under high frequencies, high and low temperatures, low noise, high radiation tolerance, and higher electron mobility than silicon. These properties make them suitable for high-frequency applications like radio frequency (RF) and microwave devices.
- Direct Bandgap for Optoelectronic Applications: The direct bandgap of GaAs enables efficient emission and absorption of light, making it ideal for optoelectronic devices like high-density p-i-n detectors and laser diodes with robust silicon electronic integrated circuits.
- Versatile Applications: Kingwin Optics’ GaAs crystals, wafers, and substrates are suitable for a wide range of applications, including epitaxial growth, microwave devices, IR LEDs, laser diodes, solar cells, and infrared optical windows.
Application Areas:
- Epitaxial Growth: GaAs wafers serve as a high-quality substrate for the epitaxial growth of other III-V semiconductors, enabling the development of advanced electronic and optoelectronic devices.
- Microwave Devices: The excellent electrical properties of GaAs make it suitable for high-frequency applications, such as radio frequency (RF) and microwave devices.
- Optoelectronic Devices: The direct bandgap of GaAs enables efficient emission and absorption of light, making it ideal for optoelectronic devices like high-density p-i-n detectors and laser diodes.
- Solar Cells: GaAs crystals and wafers can be used in the development of solar cells, harnessing their unique electrical properties for efficient energy conversion.
- Infrared Optical Windows: GaAs substrates are suitable for use in infrared optical windows, providing excellent transmission and durability in infrared applications.
Kingwin Optics offers custom Gallium Arsenide (GaAs) crystals, wafers, and substrates, which are suitable for a wide range of applications, including epitaxial growth, microwave devices, IR LEDs, laser diodes, solar cells, and infrared optical windows. With their excellent electrical properties, direct bandgap, and versatility, GaAs substrates are an ideal choice for high-performance electronic and optoelectronic devices. Kingwin Optics’ custom GaAs products provide tailored solutions for various research and industrial applications.
