Substrates and Wafers for GaN Thin Film Substrates

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GaAs (Gallium Arsenide) Crystal and Wafers

High-Performance Substrate Material: GaAs wafers serve as an excellent substrate material for the epitaxial thin film growth of other III-V semiconductors, such as indium gallium arsenide and aluminum gallium arsenide.

Excellent Electrical Properties: GaAs substrates exhibit good performance under high frequencies, high and low temperatures, low noise, high radiation tolerance, and higher electron mobility than silicon. These properties make them suitable for high-frequency applications like radio frequency (RF) and microwave devices.

Direct Bandgap for Optoelectronic Applications: The direct bandgap of GaAs enables efficient emission and absorption of light, making it ideal for optoelectronic devices like high-density p-i-n detectors and laser diodes with robust silicon electronic integrated circuits.

Versatile Applications: Kingwin Optics’ GaAs crystals, wafers, and substrates are suitable for a wide range of applications, including epitaxial growth, microwave devices, IR LEDs, laser diodes, solar cells, and infrared optical windows.

Applications: Epitaxial Growth, Microwave Devices, Optoelectronic Devices, Solar Cells, Infrared Optical Windows, etc.

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GaN (Gallium Nitride) Crystals and Wafers

Wide Direct Bandgap: GaN has a wide direct bandgap of 3.4 eV, which enables efficient emission and absorption of light at short wavelengths, making it ideal for optoelectronic applications.

Stable Physical and Chemical Properties: The strong atomic bonds of GaN contribute to its stable physical and chemical properties, ensuring reliability and durability in various applications.

Exceptional Thermal Properties: GaN exhibits exceptional thermal properties, allowing it to perform well in high-temperature environments, making it suitable for high-temperature semiconductor devices.

Excellent Radiation Resistance: GaN crystals and wafers have excellent radiation resistance, making them suitable for applications in environments with high levels of radiation.

Customizable Options: Kingwin Optics offers custom GaN wafers and substrates, with options including N-type and semi-insulating types, providing tailored solutions for various applications.

Applications: LED Applications, Laser Diodes, High-Power and High-Frequency Electronic Devices, High-Temperature Semiconductor Devices, etc.

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Lithium Aluminate (LiAlO2) Crystal and Substrates

Minimal Lattice Mismatch: The lattice mismatch between LiAlO2 and GaN is only 1.4%, allowing for the growth of high-quality, defect-free III-V nitride thin films.

High Chemical Stability: LiAlO2 substrates exhibit exceptional chemical stability, enabling them to withstand high-temperature reducing atmospheres without degradation.

Direct GaN Film Growth: Single-oriented GaN films can be grown directly on LiAlO2 substrates without the need for low-temperature buffer layers, simplifying the manufacturing process and reducing costs.

Large Substrate Diameter: Kingwin Optics offers LiAlO2 substrates up to 2” in diameter, accommodating larger device sizes and increasing production efficiency.

High Surface Quality: LiAlO2 substrates from Kingwin Optics feature high surface roughness, ensuring optimal film growth and device performance.

Clean Packaging: The substrates are packaged in a clean environment to maintain their pristine surface quality and prevent contamination during storage and transportation.

Applications: III-V Nitride Thin Film Growth, High-Power Electronic Devices, Optoelectronic Devices, Research and Development, etc.

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MgAl2O4 Substrates

Cubic Crystal Structure: Provides high mechanical strength and structural stability.

Wide Spectral Optical Transmittance: Exhibits optical transmittance over a wide range from UV to IR.

Low Dielectric Loss: Suitable for high-frequency applications due to minimal energy loss.

Applications: Optical and Photonic Devices, Bulk Acoustic Wave and Microwave Devices, Epitaxial Growth of III-V Nitrides, GaN Laser Diodes (LD) Cavities, etc.

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MgO Substrates

Purity and Uniformity:

The MgO crystals used in our substrates exhibit exceptional purity, ensuring consistent performance across the entire product range.

Microscopically, the majority of MgO crystals have a grain size of at most 5 μm, ensuring a uniform microstructure that enhances overall reliability.

Electrical Insulation:

With an electrical insulation resistance of at least 10^10 Ω·cm at 300°C, our MgO Substrates are ideal for electrically insulating applications.

The ceramics have a dielectric constant of at most 10 at 100 kHz, making them suitable for high-frequency circuits and devices.

Thermal Conductivity:

The substrates boast a heat conductivity of at least 0.08 cal/cm·sec·°C at normal temperature, allowing for efficient heat dissipation in demanding environments.

Resistance to Humidity:

The MgO ceramics used in our substrates demonstrate excellent resistance to humidity, ensuring long-term stability and reliability in various climate conditions.

Surface Finish:

Both sides of the substrates are polished to a surface roughness (Ra) of ≤ 0.5 nm, providing a smooth surface for high-precision applications.

Applications: Optical Devices, High-Temperature Superconductors, Magneto-Optic Films, THz Band Generators/Receivers, Semiconductor Processing, etc.

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Sapphire (Al2O3) Substrates and Wafers

Versatility: Sapphire Wafers and Substrates are suitable for a wide range of applications, including III-V and II-VI compound thin film growth for semiconductors, Light Emitting Diodes (LEDs), high-temperature superconducting (HTSC) thin films, Microelectronic ICs (Silicon on Sapphire Integrated Circuit, SOS), Hybrid Microelectronic applications, and ferromagnetic/ferroelectric thin film growth.

Uniform Dielectric Constants: A-plane Sapphire Substrates and Wafers offer uniform dielectric constants and high electrical insulation, making them suitable alternatives for Hybrid Microelectronic applications, including HIC and MCM.

High-Speed Silicon On Sapphire (SOS): R-plane Sapphire Substrates and Wafers are ideal for the hetero-epitaxial deposition of silicon for Microelectronic ICs, enabling high-speed performance.

MOCVD Growth: C-plane Sapphire Substrates and Wafers are mainstream options for Metal Organic Chemical Vapor Deposition (MOCVD) growth of a series of III-V and II-VI compound thin films, including GaN, AlN, AlGaN, and InGaN, used in manufacturing blue, violet, and white light-emitting diodes (LEDs) and blue laser diodes (LDs).

Ferroelectric Thin Film Growth: C-plane Sapphire Substrates and Wafers are also suitable for the growth of ferroelectric thin films, such as (Pb, La)(Zr, Ti)O3 (PLZT), making them candidates for manufacturing new functional electronics.

Ferromagnetic Thin Film Growth: M-Plane Sapphire Substrates and Wafers are competent in the ferromagnetic thin film growth of Mn1−xS and other materials, making them suitable for applications such as solar-blind ultraviolet detection.

Applications: Semiconductors, Light Emitting Diodes (LEDs), High-Temperature Superconductors, Microelectronic ICs, Hybrid Microelectronic Applications, Functional Electronics, etc.

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Silicon (Si) Crystals and Wafers

High-Purity Polycrystalline Silicon Ingots:Silicon wafers are made from high-purity polycrystalline silicon ingots, ensuring minimal impurities and consistent material properties.

Controlled Manufacturing Process:The manufacturing process follows a controlled and organized sequence, including crystal growth, slicing, chamfering/grinding (lapping), surface etching/polishing, cleaning, inspection, packaging, and other processes, ensuring high-quality wafers.

Customizable Doping:Doping with designed concentrations can be introduced into the silicon crystal lattice to alter its electrical properties and create regions with specific conductivity (n-type or p-type) required for semiconductor devices.

Versatile Platform for Thin Film Deposition:Si wafers serve as excellent platforms for the deposition of various thin films to achieve specific functions, making them versatile for a wide range of applications.

Multiple Applications:Kingwin Optics’ Silicon (Si) wafers and substrates are used as substrates for GaN (Gallium Nitride) epitaxial film growth, semiconductors, and solar cells, demonstrating their versatility and wide range of applications.

Applications: GaN Epitaxial Film Growth, Semiconductors, Solar Cells, etc.

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Silicon Carbide (SiC) Crystals and Wafers

Exceptional Thermal Conduction: SiC has exceptional thermal conductivity, allowing for efficient heat dissipation in high-power devices. This results in reduced cooling necessities and improved device reliability.

Superior Mechanical Resilience: With high hardness and lightweight nature, SiC wafers are robust and durable, making them ideal for harsh operating conditions.

Broad Bandgap: The broad bandgap of SiC enables the production of devices with higher breakdown voltages and lower leakage currents, essential for high-voltage applications.

Large Electric Field Breakdown Strength: SiC’s ability to withstand large electric fields allows for the development of compact, high-efficiency power devices.

High-Temperature Endurance: SiC’s endurance to withstand high temperatures makes it suitable for applications where traditional silicon devices would fail.

Improved Switching Speeds: SiC-based power devices boast swifter switching speeds, leading to increased efficiency and reduced power loss.

Applications: High-Frequency Power Electronic Devices, RF Transistors, Optoelectronic Devices, Extreme Environmental Applications, etc.

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Zinc oxide (ZnO) Crystal and Substrates

Wide Bandgap: With a bandgap of 3.4 eV, ZnO is suitable for manifold blue and violet optoelectronic applications as well as UV devices.

Competitive Edge: The availability of large-size ZnO crystals offers a competitive advantage over other materials like GaN.

Optimal GaN Film Growth: ZnO substrates have a wurtzite structure with lattice constants well-matched to GaN, resulting in minimal lattice mismatch and optimal film growth.

Lattice Stress Absorption: ZnO is a soft compliant material that effectively absorbs lattice stress, protecting the growing GaN thin film.

Customized Solutions: Kingwin Optics offers customized high-quality ZnO crystal substrates and wafers to meet specific application requirements.

Applications: Optoelectronic Devices, UV Devices, Thin Film Growth, Research and Development, etc.

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