Substrates and Wafers for Semiconductor Film Substrates

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CZT (CdZnTe) Wafers and Substrates

High Purity: Achieved through rigorous purification processes, our CZT wafers boast a purity level exceeding 99.999999%, ensuring accurate and reliable detection.

Excellent Photoconductivity: Direct conversion of X-rays and gamma rays into electrical signals at room temperature, making them ideal for a wide range of detectors.

Wide Energy Range: Capable of detecting energies from 10KeV to 6MeV, covering the spectrum required for medical imaging, security screening, and industrial inspections.

Low Noise: Low dark current and high resistivity contribute to low noise levels, enhancing the signal-to-noise ratio and improving detection sensitivity.

Customizable: Available in various sizes and thicknesses to meet specific application requirements.

Applications: Medical Imaging, Astrophysics and High Energy Physics, Environmental Monitoring, Industrial Testing, Research & Education, etc.

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GaAs (Gallium Arsenide) Crystal and Wafers

High-Performance Substrate Material: GaAs wafers serve as an excellent substrate material for the epitaxial thin film growth of other III-V semiconductors, such as indium gallium arsenide and aluminum gallium arsenide.

Excellent Electrical Properties: GaAs substrates exhibit good performance under high frequencies, high and low temperatures, low noise, high radiation tolerance, and higher electron mobility than silicon. These properties make them suitable for high-frequency applications like radio frequency (RF) and microwave devices.

Direct Bandgap for Optoelectronic Applications: The direct bandgap of GaAs enables efficient emission and absorption of light, making it ideal for optoelectronic devices like high-density p-i-n detectors and laser diodes with robust silicon electronic integrated circuits.

Versatile Applications: Kingwin Optics’ GaAs crystals, wafers, and substrates are suitable for a wide range of applications, including epitaxial growth, microwave devices, IR LEDs, laser diodes, solar cells, and infrared optical windows.

Applications: Epitaxial Growth, Microwave Devices, Optoelectronic Devices, Solar Cells, Infrared Optical Windows, etc.

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Gallium Antimonide (GaSb) Crystals and Substrates

Excellent physical and chemical properties:

GaSb belongs to group III-V compound semiconductors with a sphalerite structure and direct bandgap characteristics, with a bandgap width of 0.725 eV (300 K) and a lattice constant of 0.60959 nm.

GaSb single crystals have a high critical yield stress (15.8 N/mm²) and a low dislocation density (no more than 10³ order of magnitude), which makes them suitable for the fabrication of high-performance optoelectronic devices.

Good lattice matching:

The band gap of GaSb covers a variety of ternary and quaternary III.-V compound solid solutions in a wide spectral range (0.8~4.3μm), and the epitaxial growth of the above solid solution materials using GaSb as a substrate material can effectively reduce the stress and defects caused by lattice mismatch.

High photoelectric conversion efficiency:

Te-doped GaSb can be used to prepare thermophotovoltaic devices, tandem solar cells and microwave devices with high photoelectric conversion efficiency. These devices excel in photoelectric conversion efficiency and stability.

Various preparation methods:

The preparation of GaSb mainly includes the improved Straight Pull Method (CZ), Vertical Gradient Solidification Method (VGF) and Vertical Bridgeman Method (VB) such as Liquid Seal Straight Pull Method (LEC), Hydrogen Reduction Method, etc. Each of these methods has its own advantages and disadvantages, but all of them can meet the growth needs of GaSb crystals to varying degrees.

Customizability:

GaSb crystals and substrates can be customized according to customer needs, including different doping types (undoped, Zn-doped, Te-doped) and size specifications to meet the needs of different application scenarios.

Applications: Infrared Detectors & Lasers, Thermophotovoltaic devices, Solar Cells, Microwave Devices, etc.

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Germanium (Ge) Crystals and Substrates

Exceptional Optical Properties:

Germanium crystals exhibit high transmittance and a high refractive index, making them suitable for optical components in Peer-to-Point communication systems.

The uniform transmittance ensures consistent performance and signal integrity.

Superior Semiconductor Characteristics:

Germanium is a semiconductor material with excellent electrical properties, allowing for efficient signal transmission and processing.

Its high radiation resistance ensures stable performance even in harsh environments.

Mechanical Strength and Durability:

Germanium substrates are mechanically strong, providing robustness and longevity in Peer-to-Point communication devices.

The ability to thin the substrates enables the creation of lighter and more compact devices.

Cost-Effective Solution:

Compared to other semiconductor materials like Gallium Arsenide (GaAs), Germanium is less expensive, offering cost savings in manufacturing Peer-to-Point communication systems.

Versatile Application Range:

Germanium crystals and substrates can be used in various components of Peer-to-Point communication systems, including infrared optics, solar cell substrates, and semiconductor devices.

Applications: Semiconductors, Infrared optics, Solar cell field, etc.

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Indium arsenide (InAs) Crystals and Substrates

High Electron Mobility: InAs has a high electron mobility, enabling it to excel in high-frequency and high-speed electronic devices. This characteristic contributes to faster signal processing and transmission.

Direct Bandgap: Its direct bandgap structure allows for efficient optical transitions, making InAs ideal for optoelectronic devices such as photodetectors and lasers.

Tunable Properties: The bandgap of InAs can be tuned by alloying with other semiconductor materials, providing flexibility in device design and performance optimization.

Good Thermal Stability: Compared to some other semiconductor materials, InAs demonstrates good thermal stability, allowing it to operate in relatively high-temperature environments.

Low Noise Characteristics: InAs exhibits low noise properties, making it suitable for applications requiring high signal-to-noise ratios, such as low-noise amplifiers.

Applications: Optoelectronics, High-Speed Electronics, Solar Cells, Thermophotovoltaics, etc.

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Indium Phosphide (InP) Wafers and Substrates

Direct Bandgap Material: Ideal for optoelectronic applications, enabling efficient optical transitions.

High Electron Mobility: Supports high-speed switching and high-frequency operation.

Scalable Sizes: Available in various diameters, including 2-inch, 3-inch, 4-inch, and 6-inch, to accommodate different manufacturing needs.

Strict Quality Control: Rigorous testing and inspection processes ensure defect-free wafers and substrates.

Applications: Laser Diodes, Photodetectors, High-Frequency Transistors, Integrated Circuits, Quantum Technologies, etc.

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Silicon (Si) Crystals and Wafers

High-Purity Polycrystalline Silicon Ingots:Silicon wafers are made from high-purity polycrystalline silicon ingots, ensuring minimal impurities and consistent material properties.

Controlled Manufacturing Process:The manufacturing process follows a controlled and organized sequence, including crystal growth, slicing, chamfering/grinding (lapping), surface etching/polishing, cleaning, inspection, packaging, and other processes, ensuring high-quality wafers.

Customizable Doping:Doping with designed concentrations can be introduced into the silicon crystal lattice to alter its electrical properties and create regions with specific conductivity (n-type or p-type) required for semiconductor devices.

Versatile Platform for Thin Film Deposition:Si wafers serve as excellent platforms for the deposition of various thin films to achieve specific functions, making them versatile for a wide range of applications.

Multiple Applications:Kingwin Optics’ Silicon (Si) wafers and substrates are used as substrates for GaN (Gallium Nitride) epitaxial film growth, semiconductors, and solar cells, demonstrating their versatility and wide range of applications.

Applications: GaN Epitaxial Film Growth, Semiconductors, Solar Cells, etc.

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Silicon Carbide (SiC) Crystals and Wafers

Exceptional Thermal Conduction: SiC has exceptional thermal conductivity, allowing for efficient heat dissipation in high-power devices. This results in reduced cooling necessities and improved device reliability.

Superior Mechanical Resilience: With high hardness and lightweight nature, SiC wafers are robust and durable, making them ideal for harsh operating conditions.

Broad Bandgap: The broad bandgap of SiC enables the production of devices with higher breakdown voltages and lower leakage currents, essential for high-voltage applications.

Large Electric Field Breakdown Strength: SiC’s ability to withstand large electric fields allows for the development of compact, high-efficiency power devices.

High-Temperature Endurance: SiC’s endurance to withstand high temperatures makes it suitable for applications where traditional silicon devices would fail.

Improved Switching Speeds: SiC-based power devices boast swifter switching speeds, leading to increased efficiency and reduced power loss.

Applications: High-Frequency Power Electronic Devices, RF Transistors, Optoelectronic Devices, Extreme Environmental Applications, etc.

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Zinc oxide (ZnO) Crystal and Substrates

Wide Bandgap: With a bandgap of 3.4 eV, ZnO is suitable for manifold blue and violet optoelectronic applications as well as UV devices.

Competitive Edge: The availability of large-size ZnO crystals offers a competitive advantage over other materials like GaN.

Optimal GaN Film Growth: ZnO substrates have a wurtzite structure with lattice constants well-matched to GaN, resulting in minimal lattice mismatch and optimal film growth.

Lattice Stress Absorption: ZnO is a soft compliant material that effectively absorbs lattice stress, protecting the growing GaN thin film.

Customized Solutions: Kingwin Optics offers customized high-quality ZnO crystal substrates and wafers to meet specific application requirements.

Applications: Optoelectronic Devices, UV Devices, Thin Film Growth, Research and Development, etc.

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