Minimal Lattice Mismatch: The lattice mismatch between LiAlO2 and GaN is only 1.4%, allowing for the growth of high-quality, defect-free III-V nitride thin films.

High Chemical Stability: LiAlO2 substrates exhibit exceptional chemical stability, enabling them to withstand high-temperature reducing atmospheres without degradation.

Direct GaN Film Growth: Single-oriented GaN films can be grown directly on LiAlO2 substrates without the need for low-temperature buffer layers, simplifying the manufacturing process and reducing costs.

Large Substrate Diameter: Kingwin Optics offers LiAlO2 substrates up to 2” in diameter, accommodating larger device sizes and increasing production efficiency.

High Surface Quality: LiAlO2 substrates from Kingwin Optics feature high surface roughness, ensuring optimal film growth and device performance.

Clean Packaging: The substrates are packaged in a clean environment to maintain their pristine surface quality and prevent contamination during storage and transportation.

Applications: III-V Nitride Thin Film Growth, High-Power Electronic Devices, Optoelectronic Devices, Research and Development, etc.