High-Performance Substrate Material: GaAs wafers serve as an excellent substrate material for the epitaxial thin film growth of other III-V semiconductors, such as indium gallium arsenide and aluminum gallium arsenide.

Excellent Electrical Properties: GaAs substrates exhibit good performance under high frequencies, high and low temperatures, low noise, high radiation tolerance, and higher electron mobility than silicon. These properties make them suitable for high-frequency applications like radio frequency (RF) and microwave devices.

Direct Bandgap for Optoelectronic Applications: The direct bandgap of GaAs enables efficient emission and absorption of light, making it ideal for optoelectronic devices like high-density p-i-n detectors and laser diodes with robust silicon electronic integrated circuits.

Versatile Applications: Kingwin Optics’ GaAs crystals, wafers, and substrates are suitable for a wide range of applications, including epitaxial growth, microwave devices, IR LEDs, laser diodes, solar cells, and infrared optical windows.

Applications: Epitaxial Growth, Microwave Devices, Optoelectronic Devices, Solar Cells, Infrared Optical Windows, etc.