Crystals and Substrates - KingwinOptics

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Fe:SrTiO3 Crystals and Substrates

Enhanced Dielectric and Magnetic Properties: The iron dopants in the SrTiO3 lattice significantly enhance the dielectric and magnetic properties of the substrate, making it ideal for applications requiring strong magnetic and dielectric responses.

Precise Doping Concentrations: Kingwin Optics provides Fe:SrTiO3 substrates with precise iron doping concentrations of 0.05% and 0.04%, allowing for tailored performance to meet specific application requirements.

High-Quality Substrates: The Fe:SrTiO3 substrates are manufactured with high precision and quality control, ensuring consistent performance and reproducibility in research and industrial applications.

Versatile Applications: The unique combination of enhanced dielectric and magnetic properties makes Fe:SrTiO3 substrates suitable for a wide range of applications, including FETs, HEMTs, MRAM, and magnetic field sensors.

Applications: Field-Effect Transistors (FETs), High Electron Mobility Transistors (HEMTs), Magnetoresistive Random-Access Memory (MRAM), Magnetic Field Sensors, etc.

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Gallium Antimonide (GaSb) Crystals and Substrates

Excellent physical and chemical properties:

GaSb belongs to group III-V compound semiconductors with a sphalerite structure and direct bandgap characteristics, with a bandgap width of 0.725 eV (300 K) and a lattice constant of 0.60959 nm.

GaSb single crystals have a high critical yield stress (15.8 N/mm²) and a low dislocation density (no more than 10³ order of magnitude), which makes them suitable for the fabrication of high-performance optoelectronic devices.

Good lattice matching:

The band gap of GaSb covers a variety of ternary and quaternary III.-V compound solid solutions in a wide spectral range (0.8~4.3μm), and the epitaxial growth of the above solid solution materials using GaSb as a substrate material can effectively reduce the stress and defects caused by lattice mismatch.

High photoelectric conversion efficiency:

Te-doped GaSb can be used to prepare thermophotovoltaic devices, tandem solar cells and microwave devices with high photoelectric conversion efficiency. These devices excel in photoelectric conversion efficiency and stability.

Various preparation methods:

The preparation of GaSb mainly includes the improved Straight Pull Method (CZ), Vertical Gradient Solidification Method (VGF) and Vertical Bridgeman Method (VB) such as Liquid Seal Straight Pull Method (LEC), Hydrogen Reduction Method, etc. Each of these methods has its own advantages and disadvantages, but all of them can meet the growth needs of GaSb crystals to varying degrees.

Customizability:

GaSb crystals and substrates can be customized according to customer needs, including different doping types (undoped, Zn-doped, Te-doped) and size specifications to meet the needs of different application scenarios.

Applications: Infrared Detectors & Lasers, Thermophotovoltaic devices, Solar Cells, Microwave Devices, etc.

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Germanium (Ge) Crystals and Substrates

Exceptional Optical Properties:

Germanium crystals exhibit high transmittance and a high refractive index, making them suitable for optical components in Peer-to-Point communication systems.

The uniform transmittance ensures consistent performance and signal integrity.

Superior Semiconductor Characteristics:

Germanium is a semiconductor material with excellent electrical properties, allowing for efficient signal transmission and processing.

Its high radiation resistance ensures stable performance even in harsh environments.

Mechanical Strength and Durability:

Germanium substrates are mechanically strong, providing robustness and longevity in Peer-to-Point communication devices.

The ability to thin the substrates enables the creation of lighter and more compact devices.

Cost-Effective Solution:

Compared to other semiconductor materials like Gallium Arsenide (GaAs), Germanium is less expensive, offering cost savings in manufacturing Peer-to-Point communication systems.

Versatile Application Range:

Germanium crystals and substrates can be used in various components of Peer-to-Point communication systems, including infrared optics, solar cell substrates, and semiconductor devices.

Applications: Semiconductors, Infrared optics, Solar cell field, etc.

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Indium arsenide (InAs) Crystals and Substrates

High Electron Mobility: InAs has a high electron mobility, enabling it to excel in high-frequency and high-speed electronic devices. This characteristic contributes to faster signal processing and transmission.

Direct Bandgap: Its direct bandgap structure allows for efficient optical transitions, making InAs ideal for optoelectronic devices such as photodetectors and lasers.

Tunable Properties: The bandgap of InAs can be tuned by alloying with other semiconductor materials, providing flexibility in device design and performance optimization.

Good Thermal Stability: Compared to some other semiconductor materials, InAs demonstrates good thermal stability, allowing it to operate in relatively high-temperature environments.

Low Noise Characteristics: InAs exhibits low noise properties, making it suitable for applications requiring high signal-to-noise ratios, such as low-noise amplifiers.

Applications: Optoelectronics, High-Speed Electronics, Solar Cells, Thermophotovoltaics, etc.

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Nb:SrTiO3 Crystals and Substrates

Conductivity: The incorporation of niobium imparts conductivity to NSTO crystals, which is a significant advantage over undoped STO. This conductivity enables their use in electronic devices and thin film growth applications where electrical properties are crucial.

Structural Similarity to STO: NSTO crystals retain the excellent lattice match and physical properties of STO, making them ideal substrates for epitaxial growth of materials with Perovskite structures.

Customizable Doping Concentrations: NSTO crystals are available with various niobium doping concentrations, such as 0.05%, 0.1%, 0.5%, and 0.7%, allowing researchers and manufacturers to select the optimal doping level for their specific applications.

Versatile Film Growth Technologies: Similar to STO, NSTO substrates can accommodate diverse film growth technologies, including Magnet Sputtering, Pulsed Laser Deposition (PLD), Vaporization, MOCVD, CVD, and laser MBE.

Applications: Electronic Devices, Thin Film Growth Substrates, Optical Windows, Research and Development, etc.

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Nd:SrTiO3 Crystals and Substrates

Excellent Lattice Matching: Nd:SrTiO3 has a similar crystal structure to SrTiO3, ensuring good lattice matching with perovskite structure materials, which is crucial for epitaxial growth and device performance.

Customizable Nd Concentration: Kingwin Optics provides Nd:SrTiO3 substrates with a precise Nd concentration of 0.05%, allowing for tailored electrical and optical properties to meet specific application requirements.

Enhanced Electrical Properties: The doping of neodymium introduces conductivity to the SrTiO3 lattice, enhancing the electrical properties of the material and making it suitable for electronic and optoelectronic applications.

Structural Stability: Nd:SrTiO3 maintains the structural stability of SrTiO3, ensuring reliability and durability in various environments and applications.

Optical Transparency: The single crystal nature of Nd:SrTiO3 substrates ensures optical transparency, making them suitable for optical applications where transparency is essential.

High-Quality Substrates: Kingwin Optics’ Nd:SrTiO3 substrates are manufactured with high precision and quality control, ensuring consistent performance and reproducibility in research and industrial applications.

Applications: Electronic Devices, Thin Film Growth, Research and Development, etc.

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Potassium Tantalate (KTaO3) Crystals and Substrates

Versatile Transmission Range: Effective across a broad spectrum, from UV to IR, enhancing its utility in optical and electronic applications.

High Dielectric Constant: Benefits applications requiring high-performance capacitors and other dielectric devices.

Ferroelectric and Piezoelectric Properties: Enables advanced functionalities in memory devices, sensors, and actuators.

High Melting Point: Ensures stability and durability in high-temperature applications.

Applications: Ferroelectric Devices, Substrates for Thin Film Growth, Optical Components, Capacitors and Microwave Devices, Waveguides, Sensors and Actuators, etc.

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TGG (Terbium Gallium Garnet) Crystals and Substrates

High Faraday Rotation: TGG exhibits an exceptionally high Faraday rotation, making it an ideal material for optical isolators, circulators, and other magneto-optical devices. This high rotation enables efficient polarization control and isolation of optical signals.

Low Optical Absorption: With low optical absorption across a wide spectral range, TGG substrates provide excellent optical transparency, ensuring minimal loss of light during transmission. This feature is crucial for maintaining signal integrity in optical communication systems and other optical applications.

Good Thermal Stability: TGG demonstrates good thermal stability, allowing it to withstand temperature fluctuations without significant degradation of its optical or magneto-optical properties. This characteristic ensures reliable performance even under demanding operating conditions.

High Laser Damage Threshold: TGG crystals possess a high laser damage threshold, enabling them to withstand intense laser irradiation without damage. This feature makes them suitable for use in high-power laser systems and other applications where exposure to high-intensity laser light is expected.

High Chemical Stability: TGG exhibits high chemical stability, resisting corrosion and other forms of degradation when exposed to various environments. This property ensures long-term durability and reliability in a wide range of applications.

Applications: Optical Isolators and Circulators, High-Power Laser Systems, Magneto-Optical Recording, Integrated Optics, Research and Development, etc.

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TiO2 (Titanium dioxide) Crystals and Substrates

Excellent Supportive Platform: TiO2 substrates offer an ideal platform for growing thin films of various materials, particularly VO2, which can be difficult to grow on other substrates.

Large Birefringence and Refractive Index: Optical grade rutile TiO2 single crystal substrates exhibit large birefringence and a high refractive index, making them suitable for spectral prism and polarizing devices such as optical isolators and beam splitters.

Superior Physical and Chemical Stabilities: Compared to YVO4, TiO2 crystals demonstrate better physical and chemical stabilities, ensuring reliable performance in various applications.

Applications: Thin Film Growth, Spectral Prism and Polarizing Devices, Optical Components, etc.

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YAlO3 (YAP) Crystals and Substrates

Optical Properties:

Transparency: Wide band gap making it suitable for near-infrared (NIR) applications.

Dopants: Rare earth and transition-metal ions can be doped for specialized applications such as lasers.

Material Properties:

High-Temperature Superconductors (HTS): Suitable for the growth of HTS thin films.

II-V Nitride and Oxide Films: Provides a reliable substrate for these materials.

Applications: High-Temperature Superconducting (HTS) Thin Films, II-V Nitride and Oxide Films, Near-Infrared (NIR) Applications, Lasers, etc.

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YSZ (Yttria Stabilized Zirconia) Crystals and Substrates

Moderate Cost: YSZ substrates offer a cost-effective solution for various applications.

Wear-Resistance: The material exhibits high wear resistance, making it suitable for demanding applications.

Good Match with Oxides: YSZ substrates have good compatibility with multiple single and multiplication oxides, allowing for versatile use in different applications.

Early Application in Superconducting Thin Films: YSZ was one of the earliest materials used for stabilizing high-temperature superconducting thin films of YBCO.

Applications: Solid Oxide Fuel Cells (SOFCs), Thermal Barrier Coatings (TBCs), Oxygen Sensors, Medical Implants, Electronics, etc.

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