Wide Direct Bandgap: GaN has a wide direct bandgap of 3.4 eV, which enables efficient emission and absorption of light at short wavelengths, making it ideal for optoelectronic applications.

Stable Physical and Chemical Properties: The strong atomic bonds of GaN contribute to its stable physical and chemical properties, ensuring reliability and durability in various applications.

Exceptional Thermal Properties: GaN exhibits exceptional thermal properties, allowing it to perform well in high-temperature environments, making it suitable for high-temperature semiconductor devices.

Excellent Radiation Resistance: GaN crystals and wafers have excellent radiation resistance, making them suitable for applications in environments with high levels of radiation.

Customizable Options: Kingwin Optics offers custom GaN wafers and substrates, with options including N-type and semi-insulating types, providing tailored solutions for various applications.

Applications: LED Applications, Laser Diodes, High-Power and High-Frequency Electronic Devices, High-Temperature Semiconductor Devices, etc.