Exceptional Thermal Conduction: SiC has exceptional thermal conductivity, allowing for efficient heat dissipation in high-power devices. This results in reduced cooling necessities and improved device reliability.

Superior Mechanical Resilience: With high hardness and lightweight nature, SiC wafers are robust and durable, making them ideal for harsh operating conditions.

Broad Bandgap: The broad bandgap of SiC enables the production of devices with higher breakdown voltages and lower leakage currents, essential for high-voltage applications.

Large Electric Field Breakdown Strength: SiC’s ability to withstand large electric fields allows for the development of compact, high-efficiency power devices.

High-Temperature Endurance: SiC’s endurance to withstand high temperatures makes it suitable for applications where traditional silicon devices would fail.

Improved Switching Speeds: SiC-based power devices boast swifter switching speeds, leading to increased efficiency and reduced power loss.

Applications: High-Frequency Power Electronic Devices, RF Transistors, Optoelectronic Devices, Extreme Environmental Applications, etc.