Lithium Aluminate (LiAlO2) Crystal and Substrates

Lithium Aluminate (LiAlO2) single crystal, possessing a corundum structure, stands out as an exceptional substrate choice for III-V nitride thin films. Notably, the lattice mismatch between LiAlO2 and Gallium Nitride (GaN) is merely 1.4%, enabling seamless integration and optimal performance. LiAlO2 substrates exhibit remarkable chemical stability, enabling them to withstand high-temperature reducing atmospheres. Furthermore, single-oriented GaN films can be directly grown on LiAlO2 substrates without the need for low-temperature buffer layers, simplifying the manufacturing process. Kingwin Optics offers LiAlO2 substrates up to 2” in diameter, featuring high surface quality and clean packaging.

Specifications:

Main performance parameters
Crystal structure	square
Lattice constant	a=5.17 A    c=6.26 A
Melting point (°C)	1900
density	2.62（g/cm3）
hardness	7.5（mohs）
The mismatch rate with GaN < 001 >	1.4%
size	10×3，10×5，10×10，15×15，，20×15，20×20，
	Ф15,Ф20，Ф1″，Ф2″,Ф2.6″
thickness	0.5mm，1.0mm
polished	Single-sided or double-sided
Crystal orientation	＜100＞  ＜001>
Plane orientation accuracy:	±0.5°
Edge Orientation Accuracy:	2° (up to 1° for special requirements)
Beveled wafers	Wafers with edge-oriented crystal planes inclined at specific angles (1°-45°) can be processed according to specific needs
Ra:	≤5Å（5µm×5µm）
wrap	Class 100 clean bag, Class 1000 clean room

 

Advantages:

• Minimal Lattice Mismatch: The lattice mismatch between LiAlO2 and GaN is only 1.4%, allowing for the growth of high-quality, defect-free III-V nitride thin films.
• High Chemical Stability: LiAlO2 substrates exhibit exceptional chemical stability, enabling them to withstand high-temperature reducing atmospheres without degradation.
• Direct GaN Film Growth: Single-oriented GaN films can be grown directly on LiAlO2 substrates without the need for low-temperature buffer layers, simplifying the manufacturing process and reducing costs.
• Large Substrate Diameter: Kingwin Optics offers LiAlO2 substrates up to 2” in diameter, accommodating larger device sizes and increasing production efficiency.
• High Surface Quality: LiAlO2 substrates from Kingwin Optics feature high surface roughness, ensuring optimal film growth and device performance.
• Clean Packaging: The substrates are packaged in a clean environment to maintain their pristine surface quality and prevent contamination during storage and transportation.

Applications:

• III-V Nitride Thin Film Growth: LiAlO2 substrates are ideal for the growth of high-quality III-V nitride thin films, such as GaN, AlN, and InN, for various electronic and optoelectronic applications.
• High-Power Electronic Devices: The ability to grow single-oriented GaN films on LiAlO2 substrates enables the development of high-power electronic devices, including high-electron-mobility transistors (HEMTs) and power amplifiers.
• Optoelectronic Devices: LiAlO2 substrates are suitable for the fabrication of optoelectronic devices, such as light-emitting diodes (LEDs) and laser diodes, benefiting from the high-quality III-V nitride thin films grown on them.
• Research and Development: Researchers and developers can utilize LiAlO2 substrates for exploring new materials, processes, and device architectures in the field of III-V nitride semiconductors.

Kingwin Optics offers Lithium Aluminate (LiAlO2) single crystal substrates with a corundum structure, tailored for the growth of III-V nitride thin films. These substrates exhibit minimal lattice mismatch with GaN, high chemical stability, and the ability to support direct GaN film growth without low-temperature buffer layers. Available in diameters up to 2”, LiAlO2 substrates from Kingwin Optics feature high surface quality and clean packaging, ensuring optimal performance and reliability for various electronic and optoelectronic applications.