LSAT Substrates

Lanthanum Strontium Aluminum Tantalum Oxide, commonly referred to as LSAT and chemically denoted as (La,Sr)(Al,Ta)O3, is a crystal with a mixed perovskite structure. This hard, transparent oxide is composed of lanthanum, aluminum, strontium, and tantalum.

Specifications:

Main performance parameters
Growth method	Tirafa
Crystal structure	cube
Lattice constant	a=3.868 A
Melting point (°C)	1840
density	6.74（g/cm3）
hardness	6.5（mohs）
Dielectric constant	22
Coefficient of thermal expansion	10 x 10-6
Color and appearance	According to the annealing situation, it is colorless to light brown, without luanite crystals and visible domains
size	10×3，10×5，10×10，15×15，，20×15，20×20，
	Ф15,Ф20，Ф1″，Ф2″
thickness	0.5mm，1.0mm
polished	Single-sided or double-sided
Crystal orientation	<100>、<110>、<111>±0.5&ordm;
Ra:	≤5&Aring; （5&micro; m×5&micro; m）
wrap	Class 100 clean bag, Class 1000 clean room

 

Key Features:

• Mixed Perovskite Structure: Ideal for various thin film growth applications due to its stable and robust crystal structure.
• Transparency and Hardness: LSAT is a transparent oxide with significant hardness, making it durable and suitable for various research and industrial applications.

Applications:

1.Epitaxial Growth of Ferroelectric Thin Films:

• Excellent substrate for the growth of ferroelectric materials due to its compatibility and structural properties.

2.High-Temperature Superconductors (HTS):

• Popular substrate for the growth of high Tc superconductors like cuprate superconductors (YBCO) and iron-based superconductors (iron-pnictides).

3.Epitaxial Oxides and Heterostructures:

• Widely used in research focused on electron correlation phenomena.
• Suitable for materials like strontium titanate (SrTiO3), rare-earth manganites, and rare-earth nickelates.

4.Semiconductors:

• Gallium nitride (GaN) and other semiconductor materials can also be grown on LSAT substrates.